Gallium

Ga 3d5/2 binding energies and 3d5/2 L3M45M45 Auger parameters from standard samples and various references sources [1,2,3,4].  a) Argon ion sputter cleaned standard sample analyzed in this laboratory [3].
Ga 3d5/2 - Ga 3d3/2 splitting is 0.45 eV +/-0.01 eV (from reference sources and standard sample).

Ga 3p3/2 binding energies from standard samples and various references sources [1,2,3,4]. a) Argon ion sputter cleaned standard sample analyzed in this laboratory [3].
Ga 3p3/2 - Ga 3p1/2 splitting is 3.53 eV (from standard sample).

Ga 2p3/2 binding energies and 2p3/2 L3M45M45 Auger parameters from standard samples and various references sources [1,2,3,4].  a) Argon ion sputter cleaned standard sample analyzed in this laboratory [3].
Ga 2p3/2 - Ga 2p1/2 splitting is 26.84 eV [5]
Ga 3s: 160 eV
Ga 2s: 1301 eV

XPS survey spectrum of sputter cleaned gallium metal.
Ga LMM spectrum of Ga2O3.

References:
[1] C.D. Wagner, A.V. Naumkin, A. Kraut-Vass, J.W. Allison, C.J. Powell, J.R.Jr. Rumble, NIST Standard Reference Database 20, Version 3.4 (web version) (http:/srdata.nist.gov/xps/) 2003.
[2] S.C. Ghosh, M.C. Biesinger, R.R. LaPierre, P. Kruse, J. Appl. Phys. 101 (2007) 114321.
[3] S.C. Ghosh, M.C. Biesinger, R.R. LaPierre, P. Kruse, J. Appl. Phys. 101 (2007) 114322.
[4] H.A. Budz, M.C. Biesinger, R.R. LaPierre, J. Vac. Sci. Technol. B 27(2) (2009) 637.
[5] J.F. Moulder, W.F. Stickle, P.E. Sobol, K.D. Bomben, Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer Corp, Eden Prairie, MN, 1992.