Gallium


Table 1. Ga 3d5/2 binding energies and 3d5/2 L3M45M45 Auger parameters. From standard samples and various references sources [1,3]
a) Argon ion sputter cleaned standard sample taken in this laboratory [3].

Ga 3d5/2 - Ga 3d3/2 splitting is 0.45 eV +/-0.01 eV (from reference sources and standard sample).


Table 2. Ga 3p3/2 binding energies. From standard samples and various references sources [1,3]
a) Argon ion sputter cleaned standard sample taken in this laboratory [3].

Ga 3p3/2 - Ga 3p1/2 splitting is 3.53 eV (from standard sample).


Table 3. Ga 2p3/2 binding energies and 2p3/2 L3M45M45 Auger parameters. From standard samples and various references sources [1,3]
a) Argon ion sputter cleaned standard sample taken in this laboratory [3].

References:
[1] C.D. Wagner, A.V. Naumkin, A. Kraut-Vass, J.W. Allison, C.J. Powell, J.R.Jr. Rumble, NIST Standard Reference Database 20, Version 3.4 (web version) (http:/srdata.nist.gov/xps/) 2003.
[2] S.C. Ghosh, M.C. Biesinger, R.R. LaPierre, P. Kruse, J. Appl. Phys. 101 (2007) 114321.
[3] S.C. Ghosh, M.C. Biesinger, R.R. LaPierre, P. Kruse, J. Appl. Phys. 101 (2007) 114322.
[4] H.A. Budz, M.C. Biesinger, R.R. LaPierre, J. Vac. Sci. Technol. B 27(2) (2009) 637.