Table 1. Common Si 2p binding energy values [1]. For Si 2p3/2 values, use the converter.

C 1s for SiC (silicon carbide) is at 283.0 eV +/- 0.8 eV.

For Talc, Mg3Si4O10(OH)2
Si2p3/2 = 103.13 eV, Si 2p = 103.3 eV [2]
Si2p3/2 = 103.5 eV, Si 2p = 103.7 eV [3]

In Beamson and Briggs [4] Si 2p3/2 for PDMS (silicone) is at 101.79 eV (Si 2p = 102.0 eV) with the C 1s at 284.38 eV and O 1s at 532.00 eV. If we shift the C 1s to 285.0 eV then Si 2p3/2 is at 102.41 eV (Si 2p = 102.6 eV) and O 1s is at 532.62 eV.

XPS spectrum of the Si 2p and Si 2s peaks and associated plamson loss structure for a HF cleaned Si wafer. 
[1] C.D. Wagner, A.V. Naumkin, A. Kraut-Vass, J.W. Allison, C.J. Powell, J.R.Jr. Rumble, NIST Standard Reference Database 20, Version 3.4 (web version) (http:/ 2003.
[2] Wagner C.D., Passoja D.E., Hillery H.F., Kinisky T.G., Six H.A., Jansen W.T., Taylor J.A. J. Vac. Sci. Technol. 21, 933 (1982).
[3] Gonzalez-Elipe A.R., Espinos J.P., Munuera G., Sanz J., Serratosa J.M. J. Phys. Chem. 92, 3471 (1988).
[4] G. Beamson, D. Briggs, High Resolution XPS of Organic Polymers - The Scienta ESCA300 Database Wiley Interscience (1992) 268-269.